BCW68F datasheet(2/2 Pages) DIOTEC

2 / 2 page

BCW68F ... BCW68H

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

- IC = 100 mA, - IB = 10 mA

- IC = 500 mA, - IB = 50 mA

- VCEsat

–

300 mV

700 mV

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

- IC = 100 mA, - IB = 10 mA

- IC = 500 mA, - IB = 50 mA

- VBEsat

–

1.25 V

2.0 V

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 45 V, (E open)

- VCE = 45 V, Tj = 125°C, (E open)

- ICB0

–

20 nA

20 µA

Emitter-Base cutoff current

- VEB = 4 V, (C open)

- IEB0

–

20 nA

Gain-Bandwidth Product – Transitfrequenz

- VCE = 5 V, - IC = 50 mA, f = 100 MHz

–

200 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE = ie = 0, f = 1 MHz

CCBO

–6 pF

–

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

–

60 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 420 K/W 1)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BCW66F ... BCW66H

Marking - Stempelung

BCW68F = DF

BCW68G = DG

BCW68H = DH

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

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