BCW66F datasheet(2/2 Pages) DIOTEC

2 / 2 page

BCW66F ... BCW66H

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

VCEsat

–

300 mV

700 mV

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

VBEsat

–

1.25 V

2.0 V

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 45 V, (E open)

VCE = 45 V, Tj = 125°C, (E open)

ICB0

–

20 nA

20 µA

Emitter-Base cutoff current

VEB = 4 V, (C open)

IEB0

–

20 nA

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 50 mA, f = 100 MHz

–

170 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCBO

–6 pF

–

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

–

60 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 420 K/W 1)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCW68F ... BCW68H

Marking - Stempelung

BCW66F = EF

BCW66G = EG

BCW66H = EH

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

BCW66F Datasheet(PDF) 2 Page - Diotec Semiconductor

BCW66F Datasheet(HTML) 2 Page - Diotec Semiconductor

Html Pages

1 2

Datasheet Download

Link URL