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ARF664 Datasheet(PDF) 1 Page - Power Semiconductors |
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ARF664 Datasheet(HTML) 1 Page - Power Semiconductors |
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1 / 2 page  FAST RECOVERY DIODE ARF664 FOR IGBT,IEGT,GCT APPLICATIONS Repetitive voltage up to 3300 V SNUBBERLESS OPERATION Mean forward current 1000 A LOW LOSSES SOFT RECOVERY Surge current 18 kA TARGET SPECIFICATION gen 03 - ISSUE : 1 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 3300 V V RSM Non-repetitive peak reverse voltage 125 3400 V I RRM Repetitive peak reverse current V=VRRM 125 mA V DC LINK Permanent DC voltage 125 1500 V CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 1000 A I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 1025 A I FSM Surge forward current Sine wave, 10 ms 125 18 kA I² t I² t reapplied reverse voltage up to 50% VRSM 1620 x1E3 A²s V FM Forward voltage Forward current = 1570 A 25 3.55 V V F(TO) Threshold voltage 125 1.80 V r F Forward slope resistance 125 0.70 mohm SWITCHING Q rr Reverse recovery charge I F = 1000 A di/dt= 250 A/µs 125 µC I rr Peak reverse recovery current VR = 100 V 125 A t rr Reverse recovery time I F = 1100 A µs Q rr Reverse recovery charge di/dt= 500 A/µs 2000 µC I rr Peak reverse recovery current VR = V 125 1100 A s Softness (s-factor), min E OFF Turn off energy dissipation J V FR Peak forward recovery di/dt= 500 A/µs 125 V MOUNTING R th(j-h) Thermal impedance Junction to heatsink, double side cooled 21 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 6 °C/kW T j Operating junction temperature 00 / 125 °C F Mounting force 22.0 / 24.5 kN Mass 520 g ORDERING INFORMATION : ARF664 S 33 standard specification VRRM/100 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 |
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Similar Description - ARF664 |
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