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ARF670 Datasheet(PDF) 1 Page - Power Semiconductors |
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ARF670 Datasheet(HTML) 1 Page - Power Semiconductors |
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1 / 2 page  FAST RECOVERY DIODE ARF670 FOR IGBT,IEGT,GCT APPLICATIONS Repetitive voltage up to 4500 V SNUBBERLESS OPERATION Mean forward current 1315 A LOW LOSSES SOFT RECOVERY Surge current 15 kA TARGET SPECIFICATION dic 02 - ISSUE : 01 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 140 4500 V V RSM Non-repetitive peak reverse voltage 140 4600 V I RRM Repetitive peak reverse current V=VRRM 140 150 mA V DC LINK Permanent DC voltage 140 2500 V CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 1315 A I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 1370 A I FSM Surge forward current Sine wave, 10 ms 140 15 kA I² t I² t reapplied reverse voltage up to 50% VRSM 1125 x1E3 A²s V FM Forward voltage Forward current = 1570 A 25 2.70 V V F(TO) Threshold voltage 140 1.50 V r F Forward slope resistance 140 0.60 mohm SWITCHING Q rr Reverse recovery charge I F = 1000 A di/dt= 250 A/µs 140 1500 µC I rr Peak reverse recovery current VR = 100 V 650 A Q rr Reverse recovery charge I F = 1000 A di/dt= 500 A/µs 2050 µC I rr Peak reverse recovery current VR = 350 V ±10% 140 1050 A V pk Peak reverse recovery voltage L= 1 µH ±10% 1400 V s Softness (s-factor), min 0.5 E OFF Turn off energy dissipation 0.8 J V FR Peak forward recovery voltage di/dt= 500 A/µs 25 35 V MOUNTING R th(j-h) Thermal impedance Junction to heatsink, double side cooled 18 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 6 °C/kW T j Operating junction temperature -40 / 140 °C F Mounting force 22.0 / 24.5 kN Mass 300 g ORDERING INFORMATION : ARF670 S 45 standard specification VRRM/100 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 |
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Similar Description - ARF670 |
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