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ARF673 Datasheet(PDF) 1 Page - Power Semiconductors |
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ARF673 Datasheet(HTML) 1 Page - Power Semiconductors |
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1 / 2 page  FAST RECOVERY DIODE ARF673 FOR IGBT,IEGT,GCT APPLICATIONS Repetitive voltage up to 4500 V SNUBBERLESS OPERATION Mean forward current 990 A LOW LOSSES SOFT RECOVERY Surge current 15 kA TARGET SPECIFICATION mar 03 - ISSUE : 2 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 4500 V V RSM Non-repetitive peak reverse voltage 125 4600 V I RRM Repetitive peak reverse current V=VRRM 125 80 mA V DC LINK Permanent DC voltage 125 2500 V CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 990 A I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 1030 A I FSM Surge forward current Sine wave, 10 ms 125 15 kA I² t I² t reapplied reverse voltage up to 50% VRSM 1125 x1E3 A²s V FM Forward voltage Forward current = =2500 A 125 3.82 V V F(TO) Threshold voltage 125 1.70 V r F Forward slope resistance 125 0.850 mohm SWITCHING t rr Reverse recovery time I F = 2100 A µs Q rr Reverse recovery charge di/dt= 1100 A/µs 2300 µC I rr Peak reverse recovery current VR = 1800 V 125 1300 A s Softness (s-factor), min 1 E OFF Turn off energy dissipation 6J V FR Peak forward recovery di/dt= 400 A/µs 125 38 V MOUNTING R th(j-h) Thermal impedance Junction to heatsink, double side cooled 18 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 6 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 22.0 / 24.5 kN Mass 300 g ORDERING INFORMATION : ARF673 S 45 standard specification VRRM/100 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 |
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