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ARF771LT Datasheet(PDF) 1 Page - Power Semiconductors |
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ARF771LT Datasheet(HTML) 1 Page - Power Semiconductors |
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1 / 2 page  FAST RECOVERY DIODE ARF771LT FOR IGBT,IEGT,GCT APPLICATIONS Repetitive voltage up to 4500 V SNUBBERLESS OPERATION Mean forward current 1730 A LOW LOSSES SOFT RECOVERY Surge current 28 kA TARGET SPECIFICATION mar 03 - ISSUE : 2 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 140 4500 V V RSM Non-repetitive peak reverse voltage 140 4600 V I RRM Repetitive peak reverse current V=VRRM 140 150 mA V DC LINK Permanent DC voltage 140 2800 V CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 1730 A I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 1790 A I FSM Surge forward current Sine wave, 10 ms 140 28 kA I² t I² t reapplied reverse voltage up to 50% VRSM 3920 x1E3 A²s V FM Forward voltage Forward current = =2500 A 140 3.95 V V F(TO) Threshold voltage 140 1.95 V r F Forward slope resistance 140 0.800 mohm SWITCHING Q rr Reverse recovery charge I F = 2500 A di/dt= 250 A/µs 140 µC I rr Peak reverse recovery current VR = 100 V 140 A t rr Reverse recovery time I F = 2500 A µs Q rr Reverse recovery charge di/dt= 1000 A/µs µC I rr Peak reverse recovery current VR = 2800 V 140 A s Softness (s-factor), min E OFF Turn off energy dissipation 7J V FR Peak forward recovery di/dt= 500 A/µs 140 65 V MOUNTING R th(j-h) Thermal impedance Junction to heatsink, double side cooled 9.5 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 2 °C/kW T j Operating junction temperature -30 / 140 °C F Mounting force 46.0 / 54.0 kN Mass 1150 g ORDERING INFORMATION : ARF771LT S 45 standard specification VRRM/100 2400 3500 1500 POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO |
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