MMBT2369 datasheet(1/2 Pages) DIOTEC

Part #	MMBT2369

Description	Surface Mount Si-Epi-Planar Switching Transistors

PDF	2 Pages

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Manufacturer	DIOTEC [Diotec Semiconductor]

Direct Link	http://www.diotec.com

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1 / 2 page

MMBT2369 / MMBT2369A

NPN

Surface Mount Si-Epi-Planar Switching Transistors

Si-Epi-Planar Schalttransistoren für die Oberflächenmontage

NPN

Version 2006-06-02

Dimensions - Maße [mm]

1 = B

2 = E

3 = C

Power dissipation – Verlustleistung

250 mW

Plastic case

Kunststoffgehäuse

SOT-23

(TO-236)

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

Maximum ratings (TA = 25°C)

Grenzwerte (TA = 25°C)

MMBT2369

MMBT2369A

Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short

VCES

40 V

15 V

Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open

VCEO

15 V

Collector-Base-voltage – Kollektor-Basis-Spannung

E open

VCBO

40 V

Emitter-Base-voltage – Emitter-Basis-Spannung

C open

VEBO

4.5 V

Power dissipation – Verlustleistung

Ptot

250 mW 1)

Collector current – Kollektorstrom (dc)

IC

200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 2)

IC = 10 mA, VCE = 1 V

IC = 100 mA, VCE = 2 V

MMBT2369

hFE

40

20

–

120

–

IC = 10 mA, VCE = 1 V

IC = 10 mA, VCE = 0.35 V

IC = 10 mA, VCE = 0.35 V, Tj = -55°C

IC = 30 mA, VCE = 0.4 V

IC = 100 mA, VCE = 1 V

MMBT2369A

hFE

–

40

20

30

20

–

120

–

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)

IC = 10 mA, IB = 1 mA

MMBT2369

VCEsat

––

0.25 V

IC = 10 mA, IB = 1 mA

IC = 10 mA, IB = 1 mA, Tj = 125°C

IC = 30 mA, IB = 3 mA

IC = 100 mA, IB = 10 mA

MMBT2369A

VCEsat

–

0.20 V

0.30 V

0.25 V

0.50 V

1

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

1

1.1

0.4

2.9 ±0.1

1

2

3

Type

Code

1.9

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