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MPSA05 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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MPSA05 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() MPSA05 ... MPSA06 MPSA05 ... MPSA06 NPN General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN Version 2006-07-25 Dimensions - Maße [mm] Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MPSA05 MPSA06 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 60 V 80 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 60 V 80 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 4 V Power dissipation – Verlustleistung Ptot 625 mW 1) Collector current – Kollektorstrom (dc) IC 500 mA Peak Collector current – Kollektor-Spitzenstrom ICM 1 A Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 2) IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V hFE hFE 100 100 – – – – Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) IC = 100 mA, IB = 10 mA VCEsat –– 0.25 V Base-Emitter voltage – Basis-Emitter-Spannung 2) IC = 100 mA, VCE = 1 V VBE – – 1.2 V Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 60 V, (E open) VCB = 80 V, (E open) MPSA05 MPSA06 ICBO ICBO – – – – 100 nA 100 nA 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 2 x 2.54 E BC |
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