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MPSA92 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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MPSA92 Datasheet(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() MPSA92 / MPSA93 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1 VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 30 mA hFE hFE hFE 25 40 40 – – Gain-Bandwidth Product – Transitfrequenz VCE = 20 V, IC = 10 mA, f = 100 MHz fT 50 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 20 V, IE = ie = 0, f = 1 MHz MPSA42 MPSA43 CCB0 CCB0 –– 3 pF 4 pF Thermal resistance junction – ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 200 K/W 2) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren MPSA92, MPSA93 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case Gültig, wenn die Anschlußdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 http://www.diotec.com/ © Diotec Semiconductor AG [%] P tot 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp. ) 1 1 |
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