2

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

0V

V

DD

R

gen

0V

-10V

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BV

DSS

Drain-to-Source Breakdown Voltage

-500

V

V

Gate Threshold Voltage

-2.5

-4.5

V

4.8

6.0

I

GSS

Gate Body Leakage

-100

nA

V

Zero Gate Voltage Drain Current

-200

ON-State Drain Current

-1.5

-1.0

-3.0

V

6.0

5.5

7.5

Change in R

0.7

1.2

Forward Transconductance

0.25

0.45

C

ISS

Input Capacitance

720

800

C

OSS

Common Source Output Capacitance

110

130

pF

Reverse Transfer Capacitance

20

50

t

d(ON)

Turn-ON Delay Time

11

30

t

r

Rise Time

11

30

Turn-OFF Delay Time

70

100

t

f

Fall Time

22

30

V

SD

Diode Forward Voltage Drop

-1.0

-1.3

V

V

Reverse Recovery Time

550

ns

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

VP0350

Switching Waveforms and Test Circuit

Package

Power Dissipation

θ

θθ

θ

θθ

@ T

TO-3

-1.5A

-3.0A

100W

1.25

30

-1.5A

-3.0A

TO-220

-1.0A

-3.0A

50W

2.5

40

-1.0A

-3.0A

Thermal Characteristics

A

-2

mA

V

GS

= 0V, V

DS

= -25V

f = 1 MHz

Static Drain-to-Source

ON-State Resistance

ns

I

R

Ω

– OBSOLETE

–