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AY08A3 Datasheet(PDF) 2 Page - Powerex Power Semiconductors

Part # AY08A3
Description  16-Pin Multiple Circuit Triac
PDF  2 Pages
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

AY08A3 Datasheet(HTML) 2 Page - Powerex Power Semiconductors

  AY08A3 Datasheet HTML 1Page - Powerex Power Semiconductors AY08A3 Datasheet HTML 2Page - Powerex Power Semiconductors  
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AY08A3-**
AY08A4-**
16-Pin Multiple Circuit Triac
0.8 Amperes/400-700 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings (for One Chip), Tj = 25°C unless otherwise specified
Characteristics
Symbol
AY08A*-08
AY08A*-12
AY08A*-14
Units
Repetitive Peak Off-state Voltage, Gate Open
VDRM
400
600
700
Volts
Non-Repetitive Peak Off-state Voltage, Gate Open
VDSM
500
720
840
Volts
On-state Current, Tc = 86°CIT(RMS)
0.8
0.8
0.8
Amperes
Non-repetitive Peak Surge, One Cycle (60Hz)
ITSM
8
8
8
Amperes
I2t for Fusing, t = 8.3 msec
I2t
0.26
0.26
0.26
A2sec
Peak Gate Power Dissipation, 20 msec
PGM
1
1
1
Watts
Average Gate Power Dissipation
PG(avg)
0.1
0.1
0.1
Watts
Peak Gate Current
IGM
0.8
0.8
0.8
Amperes
Peak Gate Voltage
VGM
6
6
6
Volts
Storage Temperature
Tstg
-40 to 125
-40 to 125
-40 to 125
°C
Operating Temperature
Tj
-40 to 125
-40 to 125
-40 to 125
°C
Electrical and Thermal Characteristics (for One Chip), Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Repetitive Off-state Current, Peak
IDRM
VDRM applied, Tj = 125°C
–
–
1.0
mA
Peak On-state Voltage
VTM
Tc = 25°C, ITM = 1.2A
–
–
2.0
Volts
Thermal Resistance
Junction to Ambient
Rth(j-a)
–
–
–
120
°C/Watt
Gate — Parameters
Gate Current to Trigger II
IRGTITj = 25°C, VD = 6V
–
–
5.0
mA
Gate Current to Trigger III
IRGTIII
RL = 6 , RG = 330
–
–
5.0
mA
Gate Voltage to Trigger II
VRGTITj = 25°C, VD = 6V
–
–
2.0
Volts
Gate Voltage to Trigger III
VRGTIII
RL = 6 , RG = 330
–
–
2.0
Volts
Non-triggering Gate Voltage
VGD
Tj = 125°C, VD = 1/2 VDRM
0.1
–
–
Volts
Critical Rate-of-Rise of Commutating
(dv/dt)c
Tj = 125°C
0.5
V/
µs
Off-state Voltage
(dv/dt)c = -0.4A/ms, VD = 400V



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