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AY08A3 Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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AY08A3 Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 2 page ![]() 2 AY08A3-** AY08A4-** 16-Pin Multiple Circuit Triac 0.8 Amperes/400-700 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings (for One Chip), Tj = 25°C unless otherwise specified Characteristics Symbol AY08A*-08 AY08A*-12 AY08A*-14 Units Repetitive Peak Off-state Voltage, Gate Open VDRM 400 600 700 Volts Non-Repetitive Peak Off-state Voltage, Gate Open VDSM 500 720 840 Volts On-state Current, Tc = 86°CIT(RMS) 0.8 0.8 0.8 Amperes Non-repetitive Peak Surge, One Cycle (60Hz) ITSM 8 8 8 Amperes I2t for Fusing, t = 8.3 msec I2t 0.26 0.26 0.26 A2sec Peak Gate Power Dissipation, 20 msec PGM 1 1 1 Watts Average Gate Power Dissipation PG(avg) 0.1 0.1 0.1 Watts Peak Gate Current IGM 0.8 0.8 0.8 Amperes Peak Gate Voltage VGM 6 6 6 Volts Storage Temperature Tstg -40 to 125 -40 to 125 -40 to 125 °C Operating Temperature Tj -40 to 125 -40 to 125 -40 to 125 °C Electrical and Thermal Characteristics (for One Chip), Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Repetitive Off-state Current, Peak IDRM VDRM applied, Tj = 125°C – – 1.0 mA Peak On-state Voltage VTM Tc = 25°C, ITM = 1.2A – – 2.0 Volts Thermal Resistance Junction to Ambient Rth(j-a) – – – 120 °C/Watt Gate — Parameters Gate Current to Trigger II IRGTITj = 25°C, VD = 6V – – 5.0 mA Gate Current to Trigger III IRGTIII RL = 6 , RG = 330 – – 5.0 mA Gate Voltage to Trigger II VRGTITj = 25°C, VD = 6V – – 2.0 Volts Gate Voltage to Trigger III VRGTIII RL = 6 , RG = 330 – – 2.0 Volts Non-triggering Gate Voltage VGD Tj = 125°C, VD = 1/2 VDRM 0.1 – – Volts Critical Rate-of-Rise of Commutating (dv/dt)c Tj = 125°C 0.5 V/ µs Off-state Voltage (dv/dt)c = -0.4A/ms, VD = 400V |
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