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SC1403ITSTRT Datasheet(PDF) 21 Page - Semtech Corporation |
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SC1403ITSTRT Datasheet(HTML) 21 Page - Semtech Corporation |
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21 / 31 page ![]() 21 2004 Semtech Corp. SC1403 POWER MANAGEMENT United States Patent No. 6,377,032 www.semtech.com Applications Information (Cont.) Input ripple current calculations: The following equations provide quick approximations for input ripple current: cycle duty 3V V V D IN = = / 3 . 3 3 cycle duty 5V V V D IN = = / 5 5 current load DC 3V I = 3 current load DC 5V I = 5 D OVL = overlapping duty cycle of the 3V and 5V pulses (varies according to input voltage) IN OVL V 9.6V for 0 D ≤ = 9.6V V 6.7V for 0.41) - (D5 D IN OVL < ≤ = 7 . 6 V for 0.36) - (D5 D IN OVL < = current input DC Average IIN = 5 5 3 3 D I D I IIN ⋅ + ⋅ = IN RMS SW V from drawn current RMS I = _ 5 3 2 5 5 3 3 2 2 _ 2 I I D I D I D I OVL RMS SW ⋅ ⋅ ⋅ + ⋅ + ⋅ = 2 2 IN_AVE SW_RMS I I + = RMS_CAP I The worst-case ripple current varies by application. For the case of I3 = I5 = 6A, the worst-case ripple occurs at Vin = 7.5V, at which point the rms capacitor ripple current is 4.2A. To handle this the reference design uses 4 paralleled ceramic capacitors, (Murata GRM32NF51E106Z, 10 uF 25V, size 1210). Each capacitor is rated at 2.2A. Choosing Synchronous mosfet and Schottky Diode Since this is a buck topology, the voltage and current ratings of the synchronous mosfet are the same as the main switching mosfet. It makes sense cost- and volume-wise to use the same mosfet for the main switch as for the synchronous mosfet. Therefore, IRF7413 is used again in the design for synchronous mosfet. To improve overall efficiency, an external Schottky diode is used in parallel to the synchronous mosfet. The freewheeling current is going into the Schottky diode instead of the body diode of the synchronous mosfet, which usually has very high forward drop and slow transient behavior. It is really important when laying out the board to place both the synchronous mosfet and Schottky diode close to each other to reduce the current ramp-up and ramp-down time due to parasitic inductance between the channel of the mosfet and the Schottky diode. The current rating of the Schottky diode can be determined by the following equation: A 2 . 0 T n 100 I I S LOAD AVG _ F = ⋅ = where 100nsec is the estimated time between the mosfet turn- ing off and the Schottky diode taking over and Ts = 3.33uS. There- fore a Schottky diode with a forward current of 0.5A is sufficient for this design. External Feedback Design In order to optimize the ripple voltage during Power Save mode, it is strongly recommended to use external voltage dividers (R10 and R9 for 5V power train; R8 and R11 for 3.3V power train) to achieve the required output voltages. In addition a 56pF (C22 for 5V and C21 for 3.3V) cap is recommended connecting from the output to both feedback pins (pin # 3 and #12). The signal-to- noise ratio is therefore increased due to the added zeros. |
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