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Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

SMD ESD Protection Diode

REV:B

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

IR

µA

VRWM = 4.5V

1

V

VRWM

4.5

Electrical Characteristics (at TA=25°C unless otherwise noted)

Reverse stand off voltage (Note 1)

Reverse leakage current

VTRIG

IT = 1mA

5.0

Reverse trigger voltage

VC

V

27.5

IPP = 100A

150

CJ

pF

VR = 0V, f = 1MHz

Clamping voltage (Note 2)

Junction capacitance

V

Rating and Characteristic Curves (CPDV4V5-HF)

Fig.1 - 8/20µs Peak Pulse Current

Waveform Acc. IEC 61000-4-5

0%

Time, (µs)

0

10

20

30

20%

40%

60%

80%

100%

120%

40

100%IPP: 8µs

50%IPP: 20µs

- t

e

Reverse Voltage, VR (V)

-6

-100

Fig.2 - Reverse Characteristics

-50

0

50

100

-5

0

4

5

6

Reverse Voltage, VR (V)

0

50

100

150

4

2

1

0

5

3

200

250

Fig.3 - Capacitance Characteristics

Ta=25°C

f=1MHz

0

16

24

0

40

80

140

120

32

40

8

Fig.4 - VC ― IPP

Reverse Peak Pulse Current, IPP (A)

160

Ta=25°C

tp=8/20µs

Notes: 1. Other voltages available upon request.

2. Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5.

QW-JP076

Reverse holding voltage

VHOLD

IT = 100mA

4.6

V

20

60

100

2

3

1

-1

-2

-3

-4

-75

-25

25

75

Ta=100°C

Ta=25°C

Pulsed