IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

e

∅ P

TO-247 AD Outline

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

3

4

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

330

pF

C

oes

V

CE

= 25 V, V

23

pF

C

res

6pF

Q

g

20

nC

Q

ge

I

C

= I

3.6

nC

Q

gc

8nC

t

d(on)

25

ns

t

ri

18

ns

t

d(off)

600

1000

ns

t

fi

1110

1600

ns

E

off

46 mJ

t

d(on)

25

ns

t

ri

20

ns

E

on

0.7

mJ

t

d(off)

660

ns

t

fi

1600

ns

E

off

5mJ

R

thJC

1.65 K/W

R

thCK

(TO-247)

0.25

K/W

Reverse Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

F

I

F

= I

3.0

V

t

< 300 us, duty cycle d < 2%

I

RM

I

F

= 6 A, V

6

A

t

rr

v

R

= 100A

360

ns

Inductive load, T

°°°°C

I

C

= I

V

Inductive load, T

°°°°C

I

C

= I

V

Min Recommended Footprint

TO-268 Outline

IXBH 6N170

IXBT

6N170