BSS138

Taiwan Semiconductor

2

Version: A2007

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

50

--

--

V

Gate Threshold Voltage

VGS = VDS, ID = 250µA

VGS(TH)

0.8

1.1

1.6

V

Gate-Source Leakage Current

VGS = ±20V, VDS = 0V

IGSS

--

--

±100

nA

Drain-Source Leakage Current

VGS = 0V, VDS = 50V

IDSS

--

--

1

µA

VGS = 0V, VDS = 50V

TJ =125°C

--

--

100

Drain-Source On-State Resistance

(Note 3)

VGS = 10V, ID = 260mA

RDS(on)

--

1.1

2.5

Ω

VGS = 4.5V, ID = 240mA

--

1.2

3

Forward Transconductance

(Note 3)

VDS = 5V, ID = 260mA

gfs

--

0.8

--

S

Dynamic

(Note 3)

Total Gate Charge

VGS = 10V, VDS = 25V,

ID = 260mA

Qg

--

2

--

nC

Total Gate Charge

VGS = 4.5V, VDS = 25V,

ID = 240mA

Qg

--

1

--

Gate-Source Charge

Qgs

--

0.3

--

Gate-Drain Charge

Qgd

--

0.3

--

Input Capacitance

VGS = 0V, VDS = 25V

f = 1.0MHz

Ciss

--

32

--

pF

Output Capacitance

Coss

--

10

--

Reverse Transfer Capacitance

Crss

--

6

--

Switching

(Note 3)

Turn-On Delay Time

VGS = 10V, VDS = 25V,

ID = 260mA, RG = 6Ω

td(on)

--

3

--

ns

Turn-On Rise Time

tr

--

11

--

Turn-Off Delay Time

td(off)

--

20

--

Turn-Off Fall Time

tf

--

48

--

Source-Drain Diode

Forward Voltage

(Note 2)

VGS = 0V, IS = 260mA

VSD

--

--

1.2

V

Reverse Recovery Time

IS = 260mA ,

dI/dt = 100A/

μs

trr

--

13

--

ns

Reverse Recovery Charge

Qrr

--

4

--

nC

Notes:

1.

Silicon limited current only.

2.

Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.

3.

Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

ORDERING CODE

PACKAGE

PACKING

BSS138 RFG

SOT-23

3,000pcs / 7

” Reel