BSS84 datasheet(4/6 Pages) TSC

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BSS84

Taiwan Semiconductor

Version: A2007

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Capacitance vs. Drain-Source Voltage

BVDSS vs. Junction Temperature

Maximum Safe Operating Area, Junction-to-Ambient

Source-Drain Diode Forward Current vs. Voltage

Normalized Thermal Transient Impedance, Junction-to-Ambient

t, Square Wave Pulse Duration (sec)

-VDS, Drain to Source Voltage (V)

TJ, Junction Temperature (°C)

-VSD, Body Diode Forward Voltage (V)

-VDS, Drain to Source Voltage (V)

0.8

0.9

1.1

1.2

-75

-50

-25

100 125 150

D=-1mA

iss

oss

rss

0.1

0.2

0.4

0.6

0.8

1.2

25℃

150℃

-55℃

0.01

0.1

0.0001

0.001

0.01

0.1

100

1000

SINGLE PULSE

RӨJA=350°C/W

Duty=0.5

Duty=0.2

Duty=0.1

Duty=0.05

Duty=0.02

Duty=0.01

Single

Notes:

Duty = t

1 / t2

J = TA + PDM x Z

ӨJA x RӨJA

0.001

0.01

0.1

100

DS(on)

10us

100us

100ms

SINGLE PULSE

RӨJA=350°C/W

A=25°C

10s

10ms

1ms

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