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NSB8JT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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NSB8JT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Plastic Rectifier Diode NSB8JT www.iscsemi.com 1 FEATURES · Glass Passivated Pellet Chip Junction · Low Forward Voltage Drop · High Forward Surge Capability APPLICATIONS · For Use in General Purpose Rectification of Power Supplies,Inverters, Converters and Freewheeling Diodes Application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VR Peak Repetitive Reverse Voltage DC Blocking Voltage 600 V VRMS Maximum RMS Voltage 420 V IF(AV) Maximum Average Forward Rectified Current at TC = 100℃ 8 A IFSM Peak Forward Surge Current 8.3 ms Single Sine-wave Superimposed on Rated Load 125 A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃ /W |
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