2N4449

Silicon NPN Transistor

Data Sheet

Description

Semicoa Semiconductors offers:

• JAN level (2N4449J)

• JANTX level (2N4449JX)

• JANTXV level (2N4449JV)

• JANS level (2N4449JS)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

• Radiation testing (total dose) upon request

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

Applications

• High-speed switching transistor

• Low power

• NPN silicon transistor

Features

• Hermetically sealed TO-46 metal can

• Also available in chip configuration

• Chip geometry 0005

• Reference document:

MIL-PRF-19500/317

Benefits

• Qualification Levels: JAN, JANTX,

JANTXV and JANS

• Radiation testing available

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Collector-Emitter Voltage

15

Volts

Collector-Base Voltage

40

Volts

Emitter-Base Voltage

4.5

Volts

Derate linearly above 25

°C

0.36

2.06

mW

mW/

°C

Thermal Resistance

325

°C/W

Operating Junction Temperature

-65 to +200

°C

Storage Temperature

-65 to +200

°C

Copyright

 2002

Semicoa Semiconductors, Inc.

Rev. J

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 1 of 2

www.SEMICOA.com