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AIS20C80B Datasheet(PDF) 2 Page - Advanced (Shenzhen) Electronics Co.,Ltd

Part # AIS20C80B
Description  3 Quadrants Triacs
PDF  6 Pages
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Manufacturer  ADV [Advanced (Shenzhen) Electronics Co.,Ltd]
Direct Link  http://www.advsemi.com/en/
Logo ADV - Advanced (Shenzhen) Electronics Co.,Ltd

AIS20C80B Datasheet(HTML) 2 Page - Advanced (Shenzhen) Electronics Co.,Ltd

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                                      AIS20C60/80
 
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www.advsemi.com
March,2013 -Rev.3.02
ADV
Electrical Characteristics( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
AIS20C60/80
Unit
S
Blank
B
IDRM
IRRM
Peak Forward Reverse Blocking
Current
VDRM = VRRM, Tj = 25°C
Max.
5
uA
VDRM = VRRM, Tj = 125°C
2.5
mA
VTM
Peak On-State Voltage
ITM = 28A, tp = 380 μs
Max.
1.55
V
VGD
Q1-Q2-Q3
Non−Trigger Gate
Voltage
VD = VDRM RL = 3.3 kΩ
Tj = 125°C
Min.
0.2
V
VGT
Q1-Q2-Q3
Gate Trigger Voltage
VD = 12V ，RL = 33Ω
Max.
1.5
V
IGT
Q1-Q2-Q3
Gate Trigger Current
Max.
10
35
50
mA
IH
Q1-Q2-Q3
Holding Current
IT = 0.1A
Max.
20
50
75
mA
IL
Q1-Q3
Latching Current
IG = 1.2 IGT
Max.
20
80
90
mA
Q2
35
90
110
dV/dt
Critical Rate of Rise of Off-State
Voltage
VD = 2/3VDRM gate open
Tj = 125°C
Min.
500
1000
1500
V/μs
(dV/dt)c
Critical Rate of Change of
Commutating Voltage
(dI/dt)c=-8.8A/ms
Tj = 125°C
Min.
1
15
20
V/μs
Rth(j-c)
Junction to case (AC)
Max.
1.9
°C/W
Rth(j-a)
Junction to ambient
Max.
60
°C/W
V
A
VD
RG
V
A
VD
RG
V
A
VD
RG
V
A
VD
RG
RL
T2+
T2-
Q1(T2+G+)
Q3(T2-G-)
Q2(T2+G-)
RL
RL
G+
G-
FIG.1:Triac quadrant are defined and the gate trigger test circuit



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