G01P15LL

GOFORD

Specifications T

J = 25ºC, unless otherwise noted

Parameter

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

Static Parameters

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250µA

-150

--

--

V

Zero Gate Voltage Drain Current

IDSS

VDS = -120V, VGS = 0V, TJ = 25ºC

--

--

-25

μA

Gate-Source Leakage

IGSS

VGS = ±25V

--

--

±100

nA

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250µA

-1.2

-2

-4

V

Drain-Source On-Resistance

RDS(on)

VGS = -10V, ID = -1A

--

0.77

1

Ω

VGS = -6V, ID = -0.8A

--

0.8

1.2

Forward Transconductance

gFS

VDS=-10V,ID=-1A

--

3.4

--

S

Dynamic Parameters

Input Capacitance

Ciss

VGS = 0V,

VDS = -50V,

f = 1.0MHz

--

520

832

pF

Output Capacitance

Coss

--

33

--

Reverse Transfer Capacitance

Crss

--

20

--

Total Gate Charge

Qg

VDD = -75V,

ID = -1A,

VGS = -10V

--

12

19.2

nC

Gate-Source Charge

Qgs

--

2

--

Gate-Drain Charge

Qgd

--

2.5

--

Turn-on Delay Time

td(on)

VDD = -75V,

ID = -1A,

RG = 3.3Ω

--

9

--

nS

Turn-on Rise Time

tr

--

5

--

Turn-off Delay Time

td(off)

--

24

--

Turn-off Fall Time

tf

--

8

--

Drain-Source Body Diode Characteristics

Body Diode Voltage

VSD

TJ = 25ºC, IS =-1.5 A, VGS = 0V

--

--

-1.3

V

Reverse Recovery Time

trr

VGS = 0V, Is = -1A,

diF/dt = 100A/μs

--

40

--

nS

Reverse Recovery Charge

Qrr

--

70

--

μC

Notes

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec ; 156oC/W when mounted on min. copper pad.

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