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A92 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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A92 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente A92 PNP Plastic-Encapsulated Transistor 25-Dec-2014 Rev. D Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Voltage. CLASSIFICATION OF hFE (2) Product-Rank A92-A A92-B A92-C Range 80~100 100~200 200~250 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -310 V Collector to Emitter Voltage VCEO -305 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -200 mA Collector Current -Pulsed ICM -500 mA Collector Power Dissipation PC 625 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C Thermal Resistance From Junction to Ambient RθJA 200 °C / mW Thermal Resistance From Junction to Case RθJC 83.3 °C / mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO -310 - - V IC= -100μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -305 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -100μA, IC=0 Collector Cut-Off Current ICBO - - -0.25 μA VCB= -200V, IE=0 Emitter Cut-Off Current IEBO - - -0.1 μA VEB= -5V, IC=0 hFE (1) 60 - - VCE= -10V, IC= -1mA hFE (2) 80 - 250 VCE= -10V, IC= -10mA DC Current Gain hFE (3) 60 - - VCE= -10V, IC= -80mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.2 V IC= -20mA, IB= -2mA Base to Emitter Voltage VBE(Sat) - - -0.9 V IC= -20mA, IB= -2mA Transition Frequency fT 50 - - MHz VCE= -20V, IC= -10mA, f=30MHz Emitter Base Collector TO-92 Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 |
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