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STAD-JUN.11.2007

PJB75N75

FEATURES

• R

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for Converters and Power Motor Controls

• Fully Characterized Avalanche Voltage and Current

• In compliance with EU RoHS 2002/95/EC directives

MECHANICAL DATA

• Terminals : Solderable per MIL-STD-750,Method 2026

• Marking : B75N75

75V N-Channel Enhancement Mode MOSFET

Maximum RATINGS and Thermal Characteristics (T

Note: 1. Maximum DC current limited by the package

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

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