G040P02K

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Specifications TJ = 25ºC, unless otherwise noted

Parameter

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

Static Parameters

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250µA

-20

--

--

V

Zero Gate Voltage Drain Current

IDSS

VDS = -20V, VGS = 0V

--

--

-1

μA

Gate-Source Leakage

IGSS

VGS = ±12V

--

--

±

100

nA

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250µA

-0.5

-0.65

-1.0

V

Drain-Source On-Resistance

RDS(on)

VGS = -4.5V, ID = -20A

--

3.4

5.0

mΩ

VGS = -2.5V, ID = -20A

--

4.3

6.0

gFS

VDS = -5V,ID = -20A

--

120

--

S

Dynamic Parameters

Input Capacitance

Ciss

VGS = 0V,

VDS = -10V,

f = 1.0MHz

--

9245

--

pF

Output Capacitance

Coss

--

1570

--

Reverse Transfer Capacitance

Crss

--

1183

--

Total Gate Charge

Qg

VDD = -10V,

ID = -20A,

VGS = -10V

--

134

--

nC

Gate-Source Charge

Qgs

--

32

--

Gate-Drain Charge

Qgd

--

15

--

Turn-on Delay Time

td(on)

VDD = -10V,

ID = -20A,

RG = 6Ω

--

22

--

ns

Turn-on Rise Time

tr

--

171

--

Turn-off Delay Time

td(off)

--

91

--

Turn-off Fall Time

tf

--

23

--

Drain-Source Body Diode Characteristics

Continuous Body Diode Current

IS

TC = 25ºC

--

--

-90

A

Body Diode Voltage

VSD

TJ = 25ºC, ISD = -20A, VGS = 0V

--

--

-1.2

V

Reverse Recovery Charge

Qrr

IF = -20A, VGS = 0V

di/dt=-100A/us

--

56

--

nC

Reverse Recovery Time

Trr

--

63

--

ns

Forward Transconductance

Notes

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. EAS condition : Tj=25℃ ,VDD=-20V,VGS=-10V,L=0.5mH,Rg=25Ω

The table shows the minimum avalanche energy, which is 225mJ when the device is tested until failure

3. Identical low side and high side switch with identical RG