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SF23C3200B Datasheet(PDF) 7 Page - King blillion Electronics Co.,Ltd.

Part # SF23C3200B
Description  32 Mbit CMOS Mask Programmable ROM
PDF  7 Pages
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Manufacturer  KB [King blillion Electronics Co.,Ltd.]
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SF23C3200B Datasheet(HTML) 7 Page - King blillion Electronics Co.,Ltd.

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King Billion Electronics Co., Ltd
駿
億
電
子
股
份
有
限
公
司
SF23C3200B
December 8, 2003
Page 7 of 7
V1.1
This specification is subject to change without notice. Please contact sales person for the latest version before use.
There are two ways of accessing the ROM data. The first one is to assert the valid address on the Address
Bus, then assert CEn “low” to enable the ROM array. The access time in this mode is specified as tACE.
The advantage of this access mode is that power consumption can be lowered. The second access mode
keeps the CEn “low” while changes the addresses to access the contents of ROM data. The access time in
this way is specified as tAA.
Item
Symbol
Min
Max
Unit
Condition
100
VDD = 3.0 V, no load
Read Cycle Time
tRC
120
ns
VDD = 2.4V, no load
100
VDD = 3.0 V, no load
Chip Enable Access Time
tACE
120
ns
VDD = 2.4V, no load
100
VDD = 3.0 V, no load
Address Access Time
tAA
120
ns
VDD = 2.4V, no load
Output Enable Time
tOE
50
ns
Output or Chip Disable to Output High-Z
tDF
20
ns
Output Hold from Address Change
tOH
0
ns
8. DC Electrical Characteristics
(GND = 0V, VCC = 3.0 V, TOPR = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typical
Max.
Unit
Condition
Supply Voltage
VCC
2.4
-
3.6
V
Operating Current
ICC
-
30
-
mA
No load, tRC@ 100 ns
Standby Current
ISTBY
-
10
-
µA
No load
VIH
2/3
-
1
Input voltage
VIL
0
-
1/3
VDD
VDD = 2.4V ~ 3.6V
Input current leakage
IIL
-
-
±
10
µA
P0, P1 Output High Voltage
VOH
2.4
-
-
V
IOH = 0.4 mA
P0, P1 Output Low Voltage
VOL
-
-
0.4
V
IOL = 2.1 mA
D Output High Voltage
VOH
2.4
-
-
V
IOH = 1.4 mA
D Output Low Voltage
VOL
-
-
0.4
V
IOL = 3 mA



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