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SF23C3200B Datasheet(PDF) 7 Page - King blillion Electronics Co.,Ltd. |
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SF23C3200B Datasheet(HTML) 7 Page - King blillion Electronics Co.,Ltd. |
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7 / 7 page ![]() King Billion Electronics Co., Ltd 駿 億 電 子 股 份 有 限 公 司 SF23C3200B December 8, 2003 Page 7 of 7 V1.1 This specification is subject to change without notice. Please contact sales person for the latest version before use. There are two ways of accessing the ROM data. The first one is to assert the valid address on the Address Bus, then assert CEn “low” to enable the ROM array. The access time in this mode is specified as tACE. The advantage of this access mode is that power consumption can be lowered. The second access mode keeps the CEn “low” while changes the addresses to access the contents of ROM data. The access time in this way is specified as tAA. Item Symbol Min Max Unit Condition 100 VDD = 3.0 V, no load Read Cycle Time tRC 120 ns VDD = 2.4V, no load 100 VDD = 3.0 V, no load Chip Enable Access Time tACE 120 ns VDD = 2.4V, no load 100 VDD = 3.0 V, no load Address Access Time tAA 120 ns VDD = 2.4V, no load Output Enable Time tOE 50 ns Output or Chip Disable to Output High-Z tDF 20 ns Output Hold from Address Change tOH 0 ns 8. DC Electrical Characteristics (GND = 0V, VCC = 3.0 V, TOPR = 25°C unless otherwise noted) Parameter Symbol Min. Typical Max. Unit Condition Supply Voltage VCC 2.4 - 3.6 V Operating Current ICC - 30 - mA No load, tRC@ 100 ns Standby Current ISTBY - 10 - µA No load VIH 2/3 - 1 Input voltage VIL 0 - 1/3 VDD VDD = 2.4V ~ 3.6V Input current leakage IIL - - ± 10 µA P0, P1 Output High Voltage VOH 2.4 - - V IOH = 0.4 mA P0, P1 Output Low Voltage VOL - - 0.4 V IOL = 2.1 mA D Output High Voltage VOH 2.4 - - V IOH = 1.4 mA D Output Low Voltage VOL - - 0.4 V IOL = 3 mA |
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