BC856 datasheet(2/4 Pages) PANJIT

2 / 4 page

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

Value

UNIT

Thermal Resistance , Junction to Ambient

RΘJA

556

OC/W

Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. Minimum pad layout.

EL ECTRICAL CHARACTERISTICS (TJ=25 C, unless otherwise noted)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Collector - Emitter Breakdown Voltage

BC856A,B

(IC=-10mA, IB=0)

BC857A,B,C

BC858A,B,C, BC859B,C

V(BR)CE0

-65

-45

-30

Collector - Base Breakdown Voltage

BC856A,B

(IC=-10

µA, IE=0)

BC857A,B,C

BC858A,B,C, BC859B,C

V(BR)CB0

-80

-50

-30

Emitter - Base Breakdown Voltage

(IE=-1

µA, IC=0)

V(BR)EB0

-5.0

Emitter-Base Cutoff Current

(VEB=-5V)

IEBO

-100

Collector-Base Cutoff Current (VCB=-30V, IE=0)

T J=150

ICBO

-15

-4.0

DC Current Gain

BC856A, BC857A, BC858A

(IC=-10

µA, VCE=-5V)

BC856B, BC857B, BC858B, BC859B

BC857C, BC858C, BC859C

(IC=-2.0mA, VCE=-5V)

BC856A, BC857A, BC858A

BC856B, BC857B, BC858B, BC859B

BC857C, BC858C, BC859C

hFE

110

200

420

150

270

180

290

520

220

450

800

Collector – Emitter Saturation Voltage

(IC=-10mA, IB=-0.5mA)

(IC=-100mA, IB=-5.0mA)

VCE(SAT)

-0.3

-0.65

Base – Emitter Saturation Voltage

(IC=-10mA, IB=-0.5mA)

(IC=-100mA, IB=-5.0mA)

VBE(SAT)

-0.7

-0.9

Base – Emitter On Voltage

(IC=-2.0mA, VCE=-5.0V)

(IC=-10mA, VCE=-5.0V)

VBE(ON)

-0.60

-0.75

-0.82

Collector - Base Capacitance

(VCB=-10V, IE=0, f=1MHz)

CCB

4.5

Current-Gain - Bandwidth Product

(IC=-10mA, VCE=-5.0V, f=100MHz)

200

MHz

PAGE . 2

BC856 SERIES

STAD-JUL.11.2005

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