Low Power Schottky Logic – 54LS86A

 

Quadruple 2-Input Exclusive OR Gate IC in bare die form

Rev 1.0

21/11/17

Features:

 

 

 

 

The 54LS86A is fabricated using a 2µm 40V Bipolar

process. The device contains four independent gates

and performs the Boolean functions Y = A ⊕ B = AB +

AB in positive logic. The device is characterized over

the full Military Temperature Range.

Description

High speed – 22ns (Typ) propagation delay

Low Power – ICC 10mA Max

Full Military Temperature Range.

Direct drop-in replacement for obsolete

components in long term programs.

 

 

 

 

Ordering Information

Die Dimensions in µm (mils)

 

 

 

 

 

 

The following part suffixes apply:

No suffix - MIL-STD-883 /2010B Visual Inspection

“H” - MIL-STD-883 /2010B Visual Inspection

+ MIL-PRF-38534 Class H LAT

“K” - MIL-STD-883 /2010A Visual Inspection (Space)

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

 

 

 

 

 

 

 

 

 

Die Size (Unsawn)

1330 x 1090

52 x 43

µm

mils

Minimum Bond Pad Size

98 x 98

3.86 x 3.86

µm

mils

Die Thickness

350 (±20)

13.78 (±0.79)

µm

mils

Top Metal Composition

Al 1%Si 1.1µm

Back Metal Composition

N/A – Bare Si

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

Supply Formats:

Mechanical Specification

Default – Die in Waffle Pack (400 per tray capacity)

1330 (52)

Sawn Wafer on Tape – On request

Unsawn Wafer – On request

Die Thickness <> 350µm(14 Mils) – On request

Assembled into Ceramic Package – On request

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