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CR03AM Datasheet(PDF) 2 Page - Powerex Power Semiconductors

Part # CR03AM
Description  Lead-Mount, Phase Control SCR 0.3 Amperes/400-600 Volts
PDF  4 Pages
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

CR03AM Datasheet(HTML) 2 Page - Powerex Power Semiconductors

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RGK
1k
SWITCH
SWITCH 1: IGT Measurement
SWITCH 2: VGT Measurement
(Inner resistance of voltage meter is about 1k )
IGS
1 2
IGT
VGT
3V
DC
6V
DC
60
TUT
A1
V1
A2
A3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
CR03AM
Lead-Mount, Phase Control SCR
0.3 Amperes/400-600 Volts
P-8
Absolute Maximum Ratings, Ta = 25 °C unless otherwise specified
Ratings
Symbol
CR03AM-8
CR03AM-12
Units
Repetitive Peak Off-state Voltage
VDRM
400
600
Volts
Repetitive Peak Reverse Voltage
VRRM
400
600
Volts
Non-repetitive Peak Reverse Voltage
VRSM
500
720
Volts
DC Reverse Voltage
VR(DC)
320
480
Volts
DC Forward Voltage
VD(DC)
320
480
Volts
RMS On-state Current
IT(RMS)
0.47
0.47
Amperes
Average On-state Current (Nominal, See Graphs) Ta = 47°C
IT(avg)
0.3
0.3
Amperes
Non-repetitive Peak Surge, On-state Current One Cycle (60 Hz)
ITSM
20
20
Amperes
I2t for Fusing, t = 8.3 msec
I2t
1.6
1.6
A2sec
Peak Gate Power Dissipation
PGM
0.5
0.5
Watts
Average Gate Power Dissipation
PG(avg)
0.1
0.1
Watts
Peak Forward Gate Current
IFGM
0.3
0.3
Amperes
Peak Forward Gate Voltage
VFGM
6
6
Volts
Peak Reverse Gate Voltage
VRGM
6
6
Volts
Storage Temperature
Tstg
-40 to 125
-40 to 125
°C
Operating Temperature
Tj
-40 to 125
-40 to 125
°C
Weight
–
0.23
0.23
Grams
Electrical and Thermal Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Voltage – Blocking State
Peak Forward Leakage
IDRM
Tj = 110°C, VD = VDRM
–
–
0.1
mA
Peak Reverse Leakage
IRRM
Tj = 110°C, VR = VRRM
–
–
0.1
mA
Current – Conducting State
Peak On-state Voltage
VTM
Ta = 25°C, ITM = 4 A Peak
–
–
1.8
Volts
DC Holding Current
IH
VD = 12V, RGK = 1K , Tj = 25°C
–
1.5
3.0
mA
Thermal Resistance,
Junction-to-ambient
Rth(j-a)
–
–
–
180
°C/W
Gate – Parameters
Gate Current to Trigger†
IGT
VD = 6V, RL = 60 , Tj = 25°C
1
–
100
A
Gate Voltage to Trigger†
VGT
VD = 6V, RL = 60 , Tj = 25°C
–
–
0.8
Volts
Non-triggering Gate Voltage
VGDM
VD = 1/2VDRM, RGK = 1k , Tj = 110°C
0.2
–
–
Volts
† IGT, VGT Measurement Circuit



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