4-174
RF2046
Rev A11 050207
Absolute Maximum Ratings
Parameter
Rating
Unit
Input RF Power
+13
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-60 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 °C, VD=3.5V, ICC=35mA
Frequency Range
DC to 3000
MHz
Gain
22.7
dB
Freq=100MHz
22.1
dB
Freq=1000MHz
18
21.0
dB
Freq=2000MHz
19.2
dB
Freq=3000MHz
Gain Flatness
±0.9
dB
100MHz to 2000MHz
Noise Figure
2.7
dB
Freq=2000MHz
Input VSWR
<2.0:1
In a 50
Ω system, DC to 3000MHz
Output VSWR
<1.9:1
In a 50
Ω system, DC to 3000MHz
Output IP3
+23.5
dBm
Freq=2000MHz±100kHz, PTONE=-18dBm
Output P1dB
+10.7
dBm
Freq=2000MHz
Reverse Isolation
22.8
dB
Freq=2000MHz
Thermal
ICC=35mA, PDISS=116mW (See Note 1.)
ThetaJC
275
°C/W
Maximum Measured Junction
Temperature at DC Bias Con-
ditions
117
°C
Mean Time To Failure (MTTF)
280,000
years
TAMB=+85°C
Power Supply
With 22
Ω bias resistor, T=+25°C
Device Operating Voltage
3.0
3.5
4.0
V
At pin 3 with ICC=35mA
3.6
4.3
4.6
V
At evaluation board connector, ICC=35mA
Operating Current
35
mA
See Note 2.
NOTES:
Note 1: The RF2046 must be operated at or below 35mA in order to achieve the thermal performance stated above. Operating at 35mA
will ensure the best possible combination of reliability and electrical performance.
Note 2: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution
should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 35mA over all intended
operating conditions.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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