2SA844 datasheet(1/1 Pages) TEL

Part #	2SA844

Description	Plastic-Encapsulated Transistors

PDF	1 Pages

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Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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TO-92 Plastic-Encapsulated Transistors

2SA844

TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM : 0.3 W (Tamb=25

℃)

Collector current

ICM:

-0.1 A

Collector-base voltage

V(BR)CBO : -55 V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= -10

µA , I

E=0

-55

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1mA , IB=0

-55

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -10µA, IC=0

-5

V

Collector cut-off current

ICBO

VCB= -18V , IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB= -2 V ,

IC=0

-0.05

µA

DC current gain

hFE

VCE=-12V, IC= -2mA

160

800

Collector-emitter saturation voltage

VCE(sat)

IC= -10mA, IB= -1 mA

-0.5

V

Base-emitter

voltage

VBE(on)

VCE= -12V, IC= -2mA

-0.75

V

Transition frequency

f T

VCE=-12V, IC= -2mA

150

MHz

CLASSIFICATION OF hFE

Rank

C

D

E

Range

160-320

250-500

400-800

1 2 3

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

Transys

Electronics

LI M ITE D

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