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2SA950 Datasheet(PDF) 1 Page - TRANSYS Electronics Limited

Part # 2SA950
Description  Plastic-Encapsulated Transistors
PDF  1 Pages
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Manufacturer  TEL [TRANSYS Electronics Limited]
Direct Link  http://www.transyselectronics.com
Logo TEL - TRANSYS Electronics Limited

2SA950 Datasheet(HTML) 1 Page - TRANSYS Electronics Limited

  2SA950 Datasheet HTML 1Page - TRANSYS Electronics Limited  
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TO-92 Plastic-Encapsulated Transistors
2SA950
TRANSISTOR (PNP)
FEATURE
Power dissipation
PCM : 0.6 W (Tamb=25
℃)
Collector current
ICM :
-0.8
A
Collector-base voltage
V(BR)CBO : -35 V
Operating and storage junction temperature range
Tj, Tstg:
-55
℃ to +150℃
ELECTRICAL
CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -1mA , IE=0
-35
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10 mA , IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -1Ma, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -35V, IE=0
-0.1
µA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
µA
hFE(1)
VCE=-1V, IC=-100mA
100
320
DC current gain
hFE(2)
VCE=-1V, IC= -700mA
35
Collector-emitter saturation voltage
VCE(sat)
IC= -500mA, IB= -20mA
-0.7
V
Collector Output Capacitance
Cob
VCB=-10V, IE=0
f=1MHZ
19
pF
Transition frequency
f T
VCE=-5V, IC=-10mA,
120
MHz
CLASSIFICATION OF hFE(1)
Rank
O
Y
Range
100-200
160-320
1 2 3
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Transys
Electronics
LI M ITE D


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