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2SA1832 Datasheet(PDF) 1 Page - TRANSYS Electronics Limited |
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2SA1832 Datasheet(HTML) 1 Page - TRANSYS Electronics Limited |
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1 / 2 page  SOT-523 Plastic-Encapsulated Transistors 2SA1832 TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.1 W (Tamb=25 ℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 µA DC current gain hFE(1) VCE=-6V, IC=-2mA 120 400 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V Transition frequency fT VCE=-10V, IC=-1mA 80 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 7 pF CLASSIFICATION OF hFE(1) Rank Y GR Range 120-240 200-400 Marking SY SG SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Transys Electronics LI M ITE D |
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