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2SC1383 Datasheet(PDF) 1 Page - TRANSYS Electronics Limited |
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2SC1383 Datasheet(HTML) 1 Page - TRANSYS Electronics Limited |
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1 / 1 page ![]() TO-92L Plastic-Encapsulate Transistors 2SC1383 TRANSISTOR (NPN) 2SC1384 FEATURE Power dissipation PCM: 1 W (Tamb=25 ℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage 2SC1383 2SC1384 V(BR)CBO Ic= 10 µA , I E=0 30 50 V Collector-emitter breakdown voltage 2SC1383 2SC1384 V(BR)CEO IC=2mA , IB=0 25 50 V Emitter-base breakdown voltage V(BR)EBO IE= 10µA, IC=0 5 V Collector cut-off current ICBO VCB=20V , IE=0 0.1 µA hFE(1) VCE=10 V, IC= 500mA 85 340 DC current gain hFE(2) VCE=5 V, IC= 1A 50 Collector-emitter saturation voltage VCE(sat) IC= 500m A, IB=50mA 0.4 V Base-emitter saturation voltage VBE(sat) IC= 500mA , IB= 50mA 1.2 V Transition frequency f T VCE= 10 V, IC= 50mA 100 MHz CLASSIFICATION OF hFE(1) Rank Q R S Range 85-170 120-240 170-340 1 2 3 TO-92L 1. EMITTER 2. COLLECTOR 3. BASE Transys Electronics LI M ITE D |
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