2SC1959 datasheet(1/1 Pages) TEL

Part #	2SC1959

Description	Plastic-Encapsulated Transistors

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Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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TO-92 Plastic-Encapsulate

d Transistors

2SC1959

TRANSISTOR (NPN)

FEATURE

Power dissipation

PCM:

0.5 W (Tamb=25

℃)

Collector current

ICM:

0.5

A

Collector-base voltage

V(BR)CBO:

35

V

Operating and storage junction temperature range

Tstg: -55

℃ to +150℃

TJ: 150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100µA , IE=0

35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1 mA , IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 35V , IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB= 5 V ,

IC=0

0.1

µA

hFE (1)

VCE=1 V, IC= 100mA

70

400

DC current gain

hFE (2)

VCE=6 V, IC= 400mA

25

Collector-emitter saturation voltage

VCE(sat)

IC= 100 mA, IB= 10 mA

0.25

V

Base-emitter voltage

VBE

VCE= 1V, IC= 100 mA

1.0

V

Transition frequency

f T

VCE= 12 V, IC= 2mA

200

MHz

CLASSIFICATION OF hFE

Rank

O

Y

GR

hFE (1)

70-140

120-240

200-400

Range

hFE (2)

25(min)

40(min)

1 2 3

TO-92

1. EMITTER

2. COLLECTOR

3. BSAE

Transys

Electronics

LI M ITE D

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