2SC3420 datasheet(1/1 Pages) TEL

Part #	2SC3420

Description	Plastic-Encapsulated Transistors

PDF	1 Pages

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Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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TO-126C Plastic-Encapsulate

d Transistors

2SC3420 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

1.5

W (Tamb=25

℃)

Collector current

ICM:

5

A

Collector-base voltage

V(BR)CBO:

50

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

100µA, IE=0

50

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

10mA, IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

8

V

Collector cut-off current

ICBO

VCB=40V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=8V, IC=0

0.1

µA

hFE(1)

VCE=2V, IC=0.5A

140

600

DC current gain

hFE(2)

VCE=2V, IC=4A

70

Collector-emitter saturation voltage

VCE(sat)

IC=4A, IB=0.1A

1

V

Base-emitter voltage

VBE

VCE=2V, IC=4A

1.5

V

Transition frequency

fT

VCE=2V, IC=0.5A

100

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

40

pF

CLASSIFICATION OF

hFE(1)

Rank

Y

GR

BL

Range

140-240

200-400

300-600

Marking

1 2 3

TO-126C

1. EMITTER

2. COLLECTOR

3. BASE

Transys

Electronics

LI M ITE D

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