2SD313 datasheet(1/1 Pages) TEL

Part #	2SD313

Description	Plastic-Encapsulate Transistors

PDF	1 Pages

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Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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TO-220 Plastic-Encapsulate Transistors

2SD313 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

1.75

W (Tamb=25

℃)

Collector current

ICM:

3

A

Collector-base voltage

V(BR)CBO:

60

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

100µA, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

1mA, IB=0

60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=60V, IE=0

100

µA

Collector cut-off current

ICEO

VCE=60V, IE=0

1

mA

Emitter cut-off current

IEBO

VEB=4V, IC=0

100

µA

hFE(1)

VCE=2V, IC=1A

40

320

DC current gain

hFE(2)

VCE=2V, IC=0.1A

40

Collector-emitter saturation voltage

VCE(sat)

IC=2A, IB=200mA

1

V

Base-emitter voltage

VBE

VCE=2V, IC=1A

1.5

V

Transition frequency

fT

VCE=5V, IC=500mA

8

MHz

Collector output capacitance

Cob

VCB=10V, IE=0,f=1MHz

65

pF

CLASSIFICATION OF

hFE(1)

Rank

C

D

E

F

Range

40-80

60-120

100-200

160-320

1 2 3

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

Transys

Electronics

LI M ITE D

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