2SD880 datasheet(1/1 Pages) TEL

Part #	2SD880

Description	Plastic-Encapsulated Transistors

PDF	1 Pages

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Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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TO-220 Plastic-Encapsulate

d Transistors

2SD880

TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

1.5

W (Tamb=25

℃)

Collector current

ICM:

3

A

Collector-base voltage

V(BR)CBO:

60

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=100µA, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=50mA, IB=0

60

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA, IC=0

7

V

Collector cut-off current

ICBO

VCB=60V, IE=0

100

µA

Emitter cut-off current

IEBO

VEB=7V, IC=0

100

µA

DC current gain

hFE

VCE=5V, IC=500mA

60

300

Collector-emitter saturation voltage

VCE (sat)

IC=3A, IB=300mA

1

V

Base-emitter saturation voltage

VBE

IC=0.5A, VCE= 5V

1

V

Transition Frequency

f T

VCE=5 V, IC=500mA

3

MHz

Collector output capacitance

Cob

VCE=10V, IE=0, f=1MHz

70

pF

Turn on time

ton

0.8

µs

Storage time

t s

1.5

µs

Fall time

t f

IB1=-IB2=0.2A, IC=2A

VCC=30V, PW=20µs

0.8

µs

CLASSIFICATION OF hFE

Rank

O

Y

GR

Range

60-120

100-200

150-300

1 2 3

TO—220

1. BASE

2. COLLECTOR

3. EMITTER

Transys

Electronics

LI M ITE D

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