| Electronic Components Datasheet Search |
|
BAS16T Datasheet(PDF) 1 Page - TRANSYS Electronics Limited |
|
|
|||||||||||||||||||||||||||||
BAS16T Datasheet(HTML) 1 Page - TRANSYS Electronics Limited |
|
1 / 2 page ![]() SOT-523 Plastic-Encapsulate d Diodes BAS16T/BAW56T/BAV70T/BAV99T SWITCHING DIODE FEATURES Power dissipation PD: 150 mW (Tamb=25 ℃) Forward Current IF: 75 m A Reverse Voltage VR: 85 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) IR= 100µA 85 V IR1 VR=75V 2 µA Reverse voltage leakage current IR2 VR=25V 0.03 µA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Diode capacitance CD VR=0V, f=1MHz 1.5 pF Reverse recovery time t r r 4 nS SOT-523 Transys Electronics LI M ITE D |
Similar Part No. - BAS16T |
|
Similar Description - BAS16T |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |