BAS40 datasheet(1/1 Pages) TEL

Part #	BAS40

Description	SCHOTTKY DIODE

PDF	1 Pages

Scroll/Zoom	100%

Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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BAS40 SERIES

SCHOTTKY DIODE

FEATURES

Power dissipation

PD:

200

mW (Tamb=25

℃)

Forward Current

IF:

200

m A

Reverse Voltage

VR:

40

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

BAS40 Marking:43

BAS40-04 Marking:44

BAS40-05 Marking:45

BAS40-06 Marking:46

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Reverse breakdown voltage

V(BR)

IR= 100µA

40

V

Reverse voltage

leakage current

IR

VR=30V

100

nA

Forward

voltage

VF

IF=1mA

IF=40mA

380

1000

mV

Diode

capacitance

CD

VR=0V, f=1MHz

5

pF

Reverse recovery time

t r r

IF =10mA through IR=10mA

to IR=1mA

5

nS

Unit: mm

SOT-23

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