BAS35 datasheet(1/2 Pages) TEL

Part #	BAS35

Description	SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE

BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.

ABSOLUTE MAXIMUM RATINGS (per diode)

Continuous reverse voltage

VR

max.

90 V

Repetitive peak forward current

IFRM

max.

600 mA

Forward current

IF

max.

250 mA

Junction temperature

Tj

max.

150 °C

Forward voltage at IF = 50 mA

VF

<

0.84 V

Reverse recovery time when switched from

IF = 30 mA to IR = 30 mA; RL = 100 Ω;

measured at IR = 3 mA

trr

<

75 ns

RATINGS (per diode) (at TA = 25°C unless otherwise specified)

Limiting values

Continuous reverse voltage

VR

max.

90 V

Repetitive peak forward current

IFRM

max.

600 mA

Repetitive peak reverse current

IRRM

max.

600 mA

BAS29, BAS31, BAS35

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

Marking

BAS29– L20

BAS31 – L21

BAS35 – L22

1

2

3

1

2

3

1

2

3

BAS29

BAS31

BAS35

SOT-23

Transys

Electronics

LI M ITE D

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