BAV99 datasheet(2/2 Pages) TEL

Part #	BAV99

Description	SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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Forward current (d.c.)

max.

215 mA

Repetitive peak forward current

IFRM

max.

450 mA

Non–repetitive peak forward current

(per crystal)

t =

1µsIFSM

max.

4 A

t = 1 ms

IFSM

max.

1 A

t = 1 s

IFSM

max.

0,5 A

Storage temperature range

Tstg

–55 to +150 °C

Junction temperature

max.

150 °C

THERMAL RESISTANCE

From junction to ambient

Rthj–a

500 K/W

CHARACTERISTICS (per diode) (at TA = 25°C unless otherwise specified)

Tj = 25 °C unless otherwise specified

Forward voltage

IF = 1 mA

715 mV

IF = 10 mA

855 mV

IF = 50 mA

1000 mV

IF = 150 mA

1250 mV

Reverse current

VR = 25V; Tj = 150 °C

<30

µA

VR = 75 V

1,0

µA

VR = 75V; Tj = 150 °C

<50

µA

Diode capacitance

VR = 0; f = 1 MHz

1,5 pF

Forward recovery voltage when switched to

IF = 10mA; tr = 20ns

Vfr

1,75 V

BAV99

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