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BD136 Datasheet(PDF) 1 Page - TRANSYS Electronics Limited

Part # BD136
Description  Plastic-Encapsulated Transistors
PDF  1 Pages
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Manufacturer  TEL [TRANSYS Electronics Limited]
Direct Link  http://www.transyselectronics.com
Logo TEL - TRANSYS Electronics Limited

BD136 Datasheet(HTML) 1 Page - TRANSYS Electronics Limited

  BD136 Datasheet HTML 1Page - TRANSYS Electronics Limited  
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TO-126 Plastic-Encapsulate
d Transistors
BD136/BD138/BD140 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
1.25
W (Tamb=25
℃)
Collector current
ICM:
-1.5
A
Operating and storage junction temperature range
TJ, Tstg: -55
℃ to +150℃
ELECTRICAL
CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
BD136
-45
BD138
-60
Collector-base breakdown voltage
V(BR)CBO
Ic=-
100µA, IE=0
BD140
-80
V
BD136
-45
BD138
-60
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-
30mA, IB=0
BD140
-80
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-30V, IE=0
-0.1
µA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-10
µA
hFE(1)
VCE=-2V, IC=-5Ma
25
BD136
40
250
hFE(2)
VCE=-2V, IC=-150mA
BD138
BD140
40
160
DC current gain
hFE(3)
VCE=-2V, IC=-500mA
25
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB=-50mA
-0.5
V
Base-emitter voltage
VBE
VCE=-2V, IC=-500mA
-1
V
CLASSIFICATION OF
hFE(2)
Rank
6
10
16
Range
40-100
63-160
100-250
1 2 3
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
Transys
Electronics
LI M ITE D


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