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DAP222 Datasheet(PDF) 1 Page - TRANSYS Electronics Limited |
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DAP222 Datasheet(HTML) 1 Page - TRANSYS Electronics Limited |
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1 / 1 page  SOT-523 Plastic-Encapsulate d Diode DAP222 SWITCHING DIODE FEATURES: Power dissipation PD: 150 mW (Tamb=25 ℃) Collector current IF: 100 mA Collector-base voltage VR: 80 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ CIRCUIT: 1 3 2 MARKING: P ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) IR= 100µA 80 V Reverse voltage leakage current IR VR=70V 0.1 µA Forward voltage VF IF=100mA 1.2 V Diode capacitance CD VR=6V, f=1MHz 3.5 pF Reverse recovery time trr VR=6V, IF=5mA 4 ns SOT-523 Transys Electronics LI M ITE D |
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