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RB425D Datasheet(PDF) 1 Page - TRANSYS Electronics Limited |
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RB425D Datasheet(HTML) 1 Page - TRANSYS Electronics Limited |
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1 / 1 page  2. 80¡ À0. 05 1. 60¡ À0. 05 RB425D Schottky barrier Diodes FEATURES Small surface mounting type Low reverse current and low forward voltage High reliability Marking: D3L Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃ Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Mean rectifying current IO 100 mA Peak forward surge current IFSM 1 A Junction temperature Tj 125 ℃ Storage temperature Tstg -40~+125 ℃ Electrical Ratings @TA=25 ℃ Parameter Symbol Min. Typ. Max. Unit Conditions VF1 0.55 V IF=100mA Forward voltage VF2 0.34 V IF=10mA Reverse current IR 30 µA VR=10V Capacitance between terminals CT 6 pF VR=10V, f=1MHZ - + + SOT-23-3L |
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