TIP42C datasheet(1/1 Pages) TEL

Part #	TIP42C

Description	Plastic-Encapsulated Transistors

PDF	1 Pages

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Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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TO-220 Plastic-Encapsulate

d Transistors

TIP42A/42B/42C

TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

2

W (Tamb=25

℃)

Collector current

ICM:

-6

A

Collector-base voltage

V(BR)CBO:

TIP42A :

-60

V

TIP42B:

-80

V

TIP42C:

-100 V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

42A

42B

42C

V(BR)CBO

Ic= -1mA, IE=0

-60

-80

-100

V

Collector-emitter breakdown voltage

42A

42B

42C

V(BR)CEO

Ic= -30mA, IB=0

-60

-80

-100

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -1mA,IC=0

-5

V

Collector cut-off current

42A

42B

42C

ICBO

VCB=- 60V, IE=0

VCB=- 80V, IE=0

VCB=-100V, IE=0

-0.4

mA

Collector cut-off current

42A

42B

42C

ICEO

VCE= -30V, IB= 0

VCE= -60V, IB= 0

-0.7

mA

Emitter cut-off current

IEBO

VEB=-5 V, IC=0

-1

mA

hFE(1)

VCE= -4V, IC= -0.3A

30

DC current gain

hFE(2)

VCE=- 4V, IC= -3A

15

75

Collector-emitter saturation voltage

VCE(sat)

IC=-6A, IB=-0.6A

-1.5

V

Base-emitter

voltage

VBE(on

VCE= -4V, IC=-6A

-2

V

Transition frequency

fT

VCE=-10V , IC=-0.5A

f =1MHz

3

MHZ

1 2 3

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

Transys

Electronics

LI M ITE D

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