TIP3055F datasheet(1/3 Pages) TEL

Part #	TIP3055F

Description	POWER TRANSISTORS

PDF	3 Pages

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Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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POWER TRANSISTORS

TIP2955F PNP

TIP3055F NPN

TO- 3P Fully Isolated

Plastic Package

Designed for General Purpose Switching and Amplifier Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

UNIT

Collector-Emitter Voltage

VCEO

V

Collector-Emitter Voltage

VCER

V

Collector-Base Voltage

VCB

V

Emitter-Base Voltage

VEB

V

Collector Current - Continuous

IC

A

Base Current

IB

A

Total Power Dissipation upto Tc=25º C

PD

W

Derate above 25º C

W/ ºC

Operating And Storage Junction

Tj, Tstg

ºC

Temperature Range

THERMAL RESISTANCE

From Junction to case

Rth (jc)

ºC/W

From Junction to Ambient

Rth (ja)

ºC/W

ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector-Emitter Sustaining Voltage

VCEO(sus) *

IC = 30 mA, IB = 0

60

V

Collector Cutoff Current

ICER

VCE=70V, RBE=100Ω

1.0

mA

Collector Cutoff Current

ICEO

VCE = 30 V, IB =0

0.7

mA

Collector Cutoff Current

ICEV

VCE=100V, VBE(off) =1.5 V

5.0

mA

Emitter Cutoff Current

IEBO

VBE = 7.0 V, IC = 0

5.0

mA

DC Current Gain

hFE *

IC = 4.0 A, VCE = 4.0 V

20

70

IC = 10 A, VCE = 4.0 V

5.0

Collector-Emitter Saturation Voltage

VCE(sat) *

IC = 4.0 A, IB = 400 mA

1.1

V

IC = 10 A, IB = 3.3 A

3.0

Base-Emitter On Voltage

VBE(on) *

IC = 4.0 A, VCE = 4.0 V

1.8

V

Second Breakdown

Second Breakdown Collector Current

IS / b

VCE = 30 V, t = 1.0s,

3.0

A

with Base Forward Biased

Nonrepetitive

0.72

- 65 to +150

1.39

35.7

7.0

15

7.0

90

VALUE

60

70

100

B

C

E

Transys

Electronics

LI M ITE D

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