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AM29LV008B Datasheet(PDF) 35 Page - Advanced Micro Devices |
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AM29LV008B Datasheet(HTML) 35 Page - Advanced Micro Devices |
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35 / 39 page ![]() Am29LV008T/Am29LV008B 35 PRELIMINARY AC CHARACTERISTICS Write (Erase/Program) Operations Alternate CE Controlled Writes Notes: 1. Not 100% tested. 2. The duration of the program or erase operation is variable and is calculated in the internal algorithms. 3. Does not include the preprogramming time. Parameter Symbols -90R -100 -120 -150 JEDEC Standard Description Unit tAVAV tWC Write Cycle Time (Note 1) Min 90 100 120 150 ns tAVEL tAS Address Setup Time Min 0000 ns tELAX tAH Address Hold Time Min 50 50 50 65 ns tDVEH tDS Data Setup Time Min 50 50 50 65 ns tEHDX tDH Data Hold Time Min 0000 ns tOES Output Enable Setup Time Min 0000 ns tOEH Output Enable Hold Time Read (Note 1) Min 0000 ns Toggle and Data Polling (Note 1) Min 10 10 10 10 ns tGHEL tGHEL Read Recovery Time Before Write (OE High to WE Low) Min 0000 ns tWLEL tWS WE Setup Time Min 0000 ns tEHWH tWH WE Hold Time Min 0000 ns tELEH tCP CE Pulse Width Min 50 50 50 65 ns tEHEL tCPH CE Pulse Width High Min 30 30 30 35 ns tWHWH1 tWHWH1 Programming Operation Typ 9999 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 3) Typ 1111 sec |
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