STB40NF10_07 datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STB40NF10

Description	N-channel 100V - 0.025廓 - 50A - D2PAK Low gate charge STripFET??II Power MOSFET

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 13 page

STB40NF10

Electrical ratings

3/13

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

100

VDGR

Drain-gate voltage (RGS = 20 kΩ)

100

VGS

Gate- source voltage

± 20

(1)

Pulse width limited by safe operating area

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

200

Ptot

Total dissipation at TC = 25°C

150

Derating Factor

W/°C

dv/dt(3)

ISD ≤50A, di/dt ≤600A/µs, VDD =V(BR)DSS, Tj ≤TJMAX

Peak diode recovery avalanche energy

V/ns

EAS

(4)

Starting Tj = 25 °C, ID = 50A, VDD = 25V

Single pulse avalanche energy

150

Tstg

Storage temperature

-50 to 175

°C

Max. operating junction temperature

Table 2.

Thermal data

Rthj-case

Thermal resistance junction-case max

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C

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