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FS20KMA-4A Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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FS20KMA-4A Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 4 page ![]() PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. Sep.1998 V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) MITSUBISHI Nch POWER MOSFET FS20KMA-4A HIGH-SPEED SWITCHING USE V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W 200 ±20 — — 2.0 — — — — — — — — — — — — — — — 3.0 0.14 1.40 18.0 1650 200 65 20 40 290 70 0.95 — — ±10 1 4.0 0.18 1.80 — — — — — — — — — 3.13 ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol Unit Parameter Test conditions Limits Min. Typ. Max. ID = 1mA, VGS = 0V IGS = ±10 µA, VDS = 0V VGS = ±20V, VDS = 0V VDS = 200V, VGS = 0V ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 10A, VGS = 10V ID = 10A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 100V, ID = 10A, VGS = 10V, RGEN = RGS = 50 Ω IS = 10A, VGS = 0V Channel to case PERFORMANCE CURVES 0 10 20 30 40 50 0 200 50 100 150 10–1 100 2 3 5 7 101 2 3 5 7 2 3 5 2 101 35 7 2 102 35 7 2 103 35 7 102 7 2 100µs tw = 10µs 1ms 10ms DC TC = 25°C Single Pulse 0 10 20 30 40 50 0 4 8 12 16 20 VGS = 20V PD = 40W TC = 25°C Pulse Test 10V 5V 4V 6V 8V 0 4 8 12 16 20 02468 10 VGS = 20V PD = 40W TC = 25°C Pulse Test 10V 4V 3.5V 6V POWER DISSIPATION DERATING CURVE CASE TEMPERATURE TC (°C) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) |
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