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2N1711 Datasheet(PDF) 1 Page - STMicroelectronics |
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2N1711 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page  2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. ® INTERNAL SCHEMATIC DIAGRAM September 2002 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 75 V VCER Collector-Emitter Voltage (RBE ≤ 10Ω) 50 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 500 mA Ptot Total Dissipation at Tamb ≤ 25 oC at TC ≤ 25 oC at TC ≤ 100 oC 0.8 3 1.7 W W W Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC TO-39 1/4 |
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