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IXGN60N60 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IXGN60N60
Description  IGBT
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXGN60N60 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  IXGN60N60 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXGN60N60 Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXGN60N60 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISG2159
eq IXGN60N60
IGBT
www.iscsemi.com
1
DESCRIPTION
· Low VCE(sat) for minimum on-stateconduction losses
· Very high current, fast switchingIGBT
· MOS Gate turn-on drive simplicity
APPLICATIONS
· AC motor speed control
· DC servo and robot drives
· Uninterruptible power supplies (UPS)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
650
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
@ TC=25℃
100
A
IC
Collector Current-Continuous
@ TC=117℃
60
A
ICM
Pulsed Collector Current@ TC=25℃
200
A
PD
Power Dissipation @TC=25℃
250
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.81
℃
/W


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